Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbOx

In this study, we proposed a remarkable one-selector one-resistor (1S1R) device with a single Al-doped NbOx layer, which performed reasonable resistance and switching voltages without degeneration, implying robust stability and outstanding uniformity. The measurements of dc and ac modes were applied...

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Published in:IEEE transactions on electron devices 2023-01, Vol.70 (1), p.65
Main Authors: Yang, Gaoqi, Chen, Ao, Liu, Nengfan, Ma, Guokun, Lin, Zhennan, Fu, Yuyang, Zhao, Xiaohu, Rao, Yiheng, Li, Tao, Wan, Houzhao, Duan, Jinxia, Shen, Liangping, Sun, Peng, Yang, Daohong, Wang, Hao
Format: Article
Language:English
Subjects:
Conduction model
Degeneration
Filaments
First principles
Stability
Switching
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container_title IEEE transactions on electron devices
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creator Yang, Gaoqi
Chen, Ao
Liu, Nengfan
Ma, Guokun
Lin, Zhennan
Fu, Yuyang
Zhao, Xiaohu
Rao, Yiheng
Li, Tao
Wan, Houzhao
Duan, Jinxia
Shen, Liangping
Sun, Peng
Yang, Daohong
Wang, Hao
description In this study, we proposed a remarkable one-selector one-resistor (1S1R) device with a single Al-doped NbOx layer, which performed reasonable resistance and switching voltages without degeneration, implying robust stability and outstanding uniformity. The measurements of dc and ac modes were applied to confirm the nonvolatility and effective storage performance. Besides that, a conduction model based on the results of the first principles calculations was proposed to explain the reason for the oxygen vacancies were generated more and tended to the cluster. Meanwhile, they were easier to migrate in Al-doped due to a lower barrier. These contributed to achieving stable conductive filaments as well as the switching process and improve uniformity and stability. Consequently, we developed an excellent 1S1R without an independent rectified cell, which has the potential for 3-D architecture.
doi_str_mv 10.1109/TED.2022.3224093
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subjects Conduction model
Degeneration
Filaments
First principles
Stability
Switching
title Realization of Outstanding Stable 1S1R Behavior Based on Al-Doped NbOx
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