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Applications of quantum dot membrane electrolytes in LT-SOFCs

CeO2 existed in the form of quantum dots were used in fuel cell electrolytes for the first time after being compounded with semiconductor TiO2. The TiO2 @xCeO2 (x = 1,2,3) was evaluated as the membrane electrolyte for the semiconductor-ions membrane electrolyte fuel cells using H2 as fuels. The maxi...

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Bibliographic Details
Published in:Journal of alloys and compounds 2022-12, Vol.929, p.167213, Article 167213
Main Authors: Cai, Hongdong, Zheng, Dan, Xia, Chen, Wang, Xunying, Dong, Wenjing, Ganesh, K.Sivajee, Wang, Hao, Wang, Baoyuan
Format: Article
Language:English
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Summary:CeO2 existed in the form of quantum dots were used in fuel cell electrolytes for the first time after being compounded with semiconductor TiO2. The TiO2 @xCeO2 (x = 1,2,3) was evaluated as the membrane electrolyte for the semiconductor-ions membrane electrolyte fuel cells using H2 as fuels. The maximum power density of the TiO2 @ 2CeO2 quantum dot electrolyte at 550 °C reaches 839 mW cm−2, and the ion conductivity reaches 0.11 S cm−1, which is higher than the physically mixed TiO2/CeO2 composite under the same operating environment. The energy band structure and rectification characteristics test show that the cell based on TiO2/CeO2 electrolyte membrane has a physical junction effect, which can prevent electrons from passing through the interior and effectively avoid short-circuit problems. This study shows that the TiO2 @xCeO2 (x = 1,2,3) composite in quantum dots form is a promising electrolyte that can promote the development of low-temperature solid oxide fuel cell. [Display omitted] •TiO2 particles were modified by CeO2 quantum dots (QD) to fabricate TiO2 @xCeO2 (x = 1,2,3) hetero-structure.•The TiO2 @CeO2 (QD) heterojunction was beneficial to ion conduction, and the ionic conductivity reached 0.11 S cm−1 at 550 °C.•The TiO2 @CeO2 (QD) heterojunction can block the electrons generated from the reduction of Ce4+.•The energy band alignment was response for the function of quantum dot.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2022.167213