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Fabrication of Rb2TeI6 thin films for stable, lead-free perovskite photodetector via dry-processed approach

In the vacancy-ordered double perovskite group, rubidium tellurium iodide is a rarely studied material. In this paper, we report the fabrication of Rb2TeI6 thin film via a dry-processed approach. The process includes the chemical vapor deposition of the RbI film, followed by a thermal annealing trea...

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Bibliographic Details
Published in:Journal of alloys and compounds 2023-01, Vol.931, p.167494, Article 167494
Main Authors: Hoat, Phung Dinh, Vo, Van Khoe, Hung, Pham Tien, Oh, Seong-Uk, Kim, Dokyum, Lee, Joon-Hyung, Lee, Sangwook, Heo, Young-Woo
Format: Article
Language:English
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Summary:In the vacancy-ordered double perovskite group, rubidium tellurium iodide is a rarely studied material. In this paper, we report the fabrication of Rb2TeI6 thin film via a dry-processed approach. The process includes the chemical vapor deposition of the RbI film, followed by a thermal annealing treatment in TeI4 vapor. The film has a tetragonal structure with good morphology, high absorption coefficient (>105 cm−1 in the 280–620 nm wavelength range), and good stability in ambient air. A photodetector is fabricated by growing a 300 nm-thick Rb2TeI6 film on indium-doped tin oxide electrodes. The Rb2TeI6-based photodetector has 0.87 pA dark current at 5 V bias. Under 450 nm illumination, it shows 1.4 mA/W photoresponsivity, approximately 1010 J photodetectivity, and 16.4 ms/19.2 ms response times with an excellent operational stability. This study not only presents an effective technique for fabricating the Rb2TeI6 perovskite thin film, but also shows its potential for photodetector application. [Display omitted] •For the first time, a thin film of Rb2TeI6 perovskite was synthesized using the non-solution method through two-step process.•The physical properties (phases, morphologies, light absorbance) of the Rb2TeI6 film were studies.•Photosensing characteristics were investigated showing its potential for photodetector application
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2022.167494