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Visible and Infrared Photoresponse in (V0.99Cr0.01)2O3 Epitaxial Films

Herein, an infrared (IR) photodetector has been demonstrated by depositing the (V0.99Cr0.01)2O3 films on top of a sapphire (Al2O3) wafer. The photoresponse properties, including photocurrent, voltage, responsivity, and response speed, at different temperatures and wavelengths are explored. The resul...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2023-01, Vol.220 (1), p.n/a
Main Authors: Fan, Zihao, Zhao, Guocheng, Zhao, Zhuan, Ge, Jun, Pan, Shusheng
Format: Article
Language:English
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Summary:Herein, an infrared (IR) photodetector has been demonstrated by depositing the (V0.99Cr0.01)2O3 films on top of a sapphire (Al2O3) wafer. The photoresponse properties, including photocurrent, voltage, responsivity, and response speed, at different temperatures and wavelengths are explored. The results showed that the deposited samples produce a significant photoresponse in the near‐IR (NIR) light. In particular, as temperature increases from 298 K (25 °C) to 453 K (180 °C), the responsivity of (V0.99Cr0.01)2O3 films improves from 7.4 to 49.4 mA W−1 under 5 V biased 940 nm laser irradiation, and it holds the quick response for about 5 s. The findings indicate that (V0.99Cr0.01)2O3 film is a promising candidate material for IR photodetector and temperature‐dependent optical delay triggers. The (V0.99Cr0.01)2O3 epitaxial films photodetectors have remarkable responsivity and fast response in visible and infrared light detection. Innovatively, heating the photodetectors from room temperature can improve the photocurrent and keep fast response under infrared light irradiation, indicating that (V0.99Cr0.01)2O3 films are a promising candidate material for uncooled infrared photodetector and temperature‐dependent optical delay triggers.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202200514