Milliwatt‐Power AlGaN Deep‐UV Light‐Emitting Diodes at 254nm Emission as a Clean Alternative to Mercury Deep‐UV Lamps

The emission performance of c‐sapphire‐grown deep‐UV (DUV) light‐emitting diodes (LEDs) at 254 and 258 nm is particularly poor. To overcome this critical limitation, herein, the influence of the Mg‐dopant concentration in a p‐AlGaN hole source layer (HSL) on donor–acceptor pair emission from solid‐s...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2023-01, Vol.220 (1)
Main Authors: Khan, Muhammad Ajmal, Maeda, Noritoshi, Itokazu, Yuri, Jo, Masafumi, Iimura, Kazuki, Hirayama, Hideki
Format: Article
Language:English
Subjects:
Dopants
Emission analysis
Light emitting diodes
Maximum power
Photoluminescence
Quantum efficiency
Room temperature
Sapphire
Substrates
Ultraviolet radiation
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Summary:The emission performance of c‐sapphire‐grown deep‐UV (DUV) light‐emitting diodes (LEDs) at 254 and 258 nm is particularly poor. To overcome this critical limitation, herein, the influence of the Mg‐dopant concentration in a p‐AlGaN hole source layer (HSL) on donor–acceptor pair emission from solid‐state AlGaN‐based DUV LEDs in the 254–258 nm band is investigated. Further, the influence of substrate growth temperature (TS) on the photoluminescence (PL) emission efficiency and external quantum efficiency (EQE) is investigated. When the TS is increased from 1140 to 1170 °C for a p‐AlGaN HSL with a low Mg‐dopant concentration (70 sccm), the maximum power outputs of the fabricated DUV LED at the single peak emissions of 254 and 258 nm are enhanced to 3.4 and 14 mW, respectively. Moreover, the maximum EQE of the 254 and 258 nm‐band DUV LEDs increases by ≈1.2% and 2.2%, respectively, on the wafer during both continuous‐wave and pulsed operation at room temperature.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202200621