Infrared light sensing performance of CdO-doped TiO2 thin films

• Published in: Journal of materials science. Materials in electronics 2023, Vol.34 (1), p.67, Article 67
• Main Authors: İlhan, Mustafa, Gorunmez Gungor, Zohre, Koc, Mumin Mehmet, Coşkun, Burhan, Yakuphanoğlu, Fahrettin
• Format: Article
• Language: English
• Subjects: Aluminum; Characterization and Evaluation of Materials; Chemistry and Materials Science; Infrared radiation; Materials Science; Nanocomposites; Optical and Electronic Materials; Optoelectronics; Photodiodes; Photosensitivity; Sensors; Silicon; Sol-gel processes; Spin coating; Thin films; Titanium dioxide
• ISSN: 0957-4522; 1573-482X
• DOI: 10.1007/s10854-022-09411-2

CdO-based materials are often used in infrared (IR) sensing devices. Previously, IR sensing properties of different CdO-based materials were reported. In this study, we produced CdO-doped TiO 2 films and assessed their IR sensing capabilities. TiO 2 solutions and CdO-doped TiO 2 solutions were manufactured using sol–gel synthesis. Doping the TiO 2 solutions with CdO allows us to tune the optoelectronic and photodiode characteristics of thin films in composite form. Pure TiO 2 and CdO-doped TiO 2 nanocomposite thin films were fabricated by spin coating p -Si wafers with gel solutions; pure TiO 2 gel solutions; and 1%, 2%, and 10% CdO-doped TiO 2 gel solutions. In the evaluation of the infrared (IR) light sensing performance of the thin films, both I – V and I – t I R performances of Al/ n -Si/Ti 1− x O 2 Cd x O/Al thin films were addressed. Using I – V and I – t data obtained from under dark and I R illuminations, various I R sensitivity-related characteristics such as barrier height, photoresponsivity, photosensitivity, LDR (Light Dependent Resistor) values, and so on were analysed. These results were then compared with previous studies assessing the IR and light sensitivity characteristics of different types of thin films.