Graded Bandgap Ultrathin CIGS Solar Cells

In this paper, we physically modeled passivated ultrathin Cu (In1−xGax) Se2 solar cells with different bandgap grading configurations. Firstly, we have designed the cell architecture according to the fabricated model. The novelty in this work is the modeling of passivated u-CIGS solar cells with dif...

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Bibliographic Details
Published in:Electronics (Basel) 2023-01, Vol.12 (2), p.393
Main Authors: Boukortt, Nour, Patanè, Salvatore, Hadri, Baghdad, Crupi, Giovanni
Format: Article
Language:English
Subjects:
Affinity
Buffer layers
Configurations
Copper indium gallium selenides
Density
Doping
Efficiency
Electron affinity
Energy gap
Molybdenum
Operating temperature
Optimization
Photovoltaic cells
Solar cells
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Summary:In this paper, we physically modeled passivated ultrathin Cu (In1−xGax) Se2 solar cells with different bandgap grading configurations. Firstly, we have designed the cell architecture according to the fabricated model. The novelty in this work is the modeling of passivated u-CIGS solar cells with different bandgap grading profile configurations in order to achieve high efficiency with a thickness of 500 nm. A significant influence on device performance has been observed while changing absorber doping density, electron affinity, and operating temperature (range of 10–70 °C) for the investigated samples. ZnS has been used as a buffer layer to replace the conventional CdS material in order to improve cell efficiency. The impact of the buffer doping density and electron affinity on u-CIGS cell performance is explored. The simulation results show that a high bandgap at the front and rear sides with an acceptor density of 2 × 1016 provide the best electrical cell parameters: Jsc of 31.53 mA/cm2, Voc of 742.78 mV, FF of 77.50%, η of 18.15%. Our findings can be considered guidelines for new single and/or tandem cell optimization to achieve high efficiency.
ISSN:2079-9292
2079-9292
DOI:10.3390/electronics12020393