Automatic Prediction of Metal–Oxide–Semiconductor Field‐Effect Transistor Threshold Voltage Using Machine Learning Algorithm

Machine Learning In article number 2200302, Cheol E. Han, Jae Woo Lee, and co‐workers propose an automatic‐prediction method of the metal–oxide–semiconductor field‐effect transistors MOSFET Vth (threshold voltage) using machine learning (ML). The ML model eliminates the ambiguity in Vth extraction a...

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Bibliographic Details
Published in:Advanced intelligent systems 2023-01, Vol.5 (1), p.n/a
Main Authors: Choi, Seoyeon, Park, Dong Geun, Kim, Min Jung, Bang, Seain, Kim, Jungchun, Jin, Seunghee, Huh, Ki Seok, Kim, Donghyun, Mitard, Jerome, Han, Cheol E., Lee, Jae Woo
Format: Article
Language:English
Subjects:
Algorithms
Field effect transistors
Machine learning
Metal oxide semiconductors
MOSFETs
Semiconductor devices
Threshold voltage
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Summary:Machine Learning In article number 2200302, Cheol E. Han, Jae Woo Lee, and co‐workers propose an automatic‐prediction method of the metal–oxide–semiconductor field‐effect transistors MOSFET Vth (threshold voltage) using machine learning (ML). The ML model eliminates the ambiguity in Vth extraction and provides objective Vth prediction for most FET schemes used in the semiconductor industry and research field.
ISSN:2640-4567
2640-4567
DOI:10.1002/aisy.202370002