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IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

This paper clarifies the effect of gate inductance L g inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different L g were fabricated to implement double pulse tests by conventional gate driving and digital control gate driving with three-ste...

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Bibliographic Details
Published in:IEEE access 2023-01, Vol.11, p.1-1
Main Authors: Lou, Zaiqi, Mamee, Thatree, Hata, Katsuhiro, Takamiya, Makoto, Nishizawa, Shin-ichi, Saito, Wataru
Format: Article
Language:English
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Summary:This paper clarifies the effect of gate inductance L g inside IGBT modules on gate voltage spikes when a digital gate driver is employed. Three IGBT modules with different L g were fabricated to implement double pulse tests by conventional gate driving and digital control gate driving with three-step vectors. It was found that the tradeoff between switching loss and voltage/current overshoots can be improved by digital control, but a large gate voltage spike was generated when gate-driving vectors were changed. And the spike voltage V g_spike was positively correlated to the L g . Although the V g_spike can also be suppressed by decreasing the difference of gate driving vectors between the first and the second steps, the improvement of the tradeoff is weakened. Therefore, it is required that the L g inside the IGBT modules should be reduced to suppress the V g_spike while improving the tradeoff by the digital gate driver at the same time. Furthermore, by analyzing the oscillation of the V g_spike , it indicates that there should be some other stray elements, which couple L g and the stray capacitance inside IGBT chips, affecting the V g_spike .
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3237266