On-Resistance-Reliability Tradeoffs in Al₂O₃/LaAlO₃/SiO₂ Gate for SiC Power MOSFETs

On-resistance-reliability tradeoffs are investigated for SiC power MOSFETs using Al2O3/LaAlO3/SiO2 gate dielectrics. Due to the high gate capacitance, the Al2O3/LaAlO3/SiO2 gate device shows an improvement on the channel resistance ( {R}_{\text {ch}} ) versus threshold voltage shift ( {\Delta } {V}_...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-02, Vol.70 (2), p.675-682
Main Authors: Huang, Linhua, Liu, Yong, Peng, Xin, Tsuji, Takashi, Onozawa, Yuichi, Fujishima, Naoto, Sin, Johnny K. O.
Format: Article
Language:English
Subjects:
Aluminum oxide
Al₂O₃/LaAlO₃/SiO
Electric fields
High-k dielectric materials
Logic gates
MOSFET
MOSFETs
Reliability
Resistance
Short circuits
short-circuit capability
SiC
Silicon carbide
Silicon dioxide
Stress
Threshold voltage
threshold voltage shift
time-dependent dielectric breakdown (TDDB)
Tradeoffs
Citations: Items that this one cites
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Summary:On-resistance-reliability tradeoffs are investigated for SiC power MOSFETs using Al2O3/LaAlO3/SiO2 gate dielectrics. Due to the high gate capacitance, the Al2O3/LaAlO3/SiO2 gate device shows an improvement on the channel resistance ( {R}_{\text {ch}} ) versus threshold voltage shift ( {\Delta } {V}_{\text {th}} ) tradeoff compared to the SiO2 gate counterpart. Besides, the short-circuit withstand time of the Al2O3/LaAlO3/SiO2 gate device is 1.55 times longer than that of the SiO2 gate device, while the two devices have the same on-resistance. Furthermore, the predicted lifetime of the Al2O3/LaAlO3/SiO2 gate device is ten years at an effective electric field ( {E}_{\text {eff}} ) of 4.8 MV/cm, which is comparable with the latest reported result of the SiO2 gate counterpart.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2022.3231813