A review on GeTe thin film-based phase-change materials

Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage device...

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Bibliographic Details
Published in:Applied nanoscience 2023, Vol.13 (1), p.95-110
Main Authors: Singh, Kamaljit, Kumari, Sudesh, Singh, Harpreet, Bala, Neeru, Singh, Palwinder, Kumar, Akshay, Thakur, Anup
Format: Article
Language:English
Subjects:
Amorphous materials
Chemistry and Materials Science
Computer storage devices
Data storage
Electronic devices
Germanium
Materials Science
Membrane Biology
Nanochemistry
Nanotechnology
Nanotechnology and Microengineering
Phase change materials
Power consumption
Review Article
Storage capacity
Tellurides
Thin films
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Summary:Germanium telluride (GeTe) is a phase-change material (PCM) from chalcogenide family, which undergoes reversible transition between amorphous and crystalline phase when subjected to optical or electrical pulse. The fast structural reversibility poses GeTe as an ideal material for data storage devices. GeTe is one of the best candidates for non-volatile memory technologies because of its high speed, low power consumption, scalability, data retention, and storage capacity. In this review, we discuss the developments in GeTe PCM, and their working and effect of interface and doping to upgrade their performance for various technological applications.
ISSN:2190-5509
2190-5517
DOI:10.1007/s13204-021-01911-7