Growth Conditions and Substrate Misorientation Angle Dependences of Silicon Incorporation in Chemical Vapor Deposition Diamond

The results of a study of the incorporation of silicon in diamond depending on the growth conditions of epitaxial layers in a chemical vapor deposition (CVD) reactor in a gas mixture of hydrogen, methane, and silane are presented. A detailed study of the effect of methane and silane flows, substrate...

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Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2023-02, Vol.220 (3), p.n/a
Main Authors: Lobaev, Mikhail Aleksandrovich, Gorbachev, Alexey Mikhailovich, Radishev, Dmitry Borisovich, Vikharev, Anatoly Leontievich, Bogdanov, Sergey Aleksandrovich, Isaev, Vladimir Aleksandrovich, Drozdov, Mikhail Nikolaevich
Format: Article
Language:English
Subjects:
Carbon content
Chemical vapor deposition
chemical vapor deposition diamond
color centers
Diamonds
Emission analysis
Emission spectra
Epitaxial growth
Epitaxial layers
Gas mixtures
luminescence
Methane
Misalignment
Silanes
Silicon
silicon incorporation
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Summary:The results of a study of the incorporation of silicon in diamond depending on the growth conditions of epitaxial layers in a chemical vapor deposition (CVD) reactor in a gas mixture of hydrogen, methane, and silane are presented. A detailed study of the effect of methane and silane flows, substrate temperature, gas mixture pressure, and substrate misorientation angle has been carried out. The influence of the surface misorientation angle on the formation of silicon‐vacancy (SiV) centers in diamond has been studied. It has been found that the carbon content in the gas mixture has a significant effect on the incorporation of silicon into diamond. Studies of the CVD growth of silicon‐doped diamond are carried out simultaneously with studies of the optical spectra of plasma emission in the reactor. The content of silicon in plasma is compared with content of silicon incorporated into diamond during CVD synthesis. The most efficient formation of SiV centers is observed for substrate misorientation angles from 2° to 4°. The incorporation of silicon in diamond depending on the growth conditions of epitaxial layers in a chemical vapor deposition (CVD) reactor in a gas mixture of hydrogen, methane, and silane is studied. The effect of the crystal surface misorientation angle on the formation of silicon‐vacancy (SiV) centers in diamond is studied.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202200654