HIGH-TEMPERATURE ANNEALING OF SILICON SUBOXIDE THIN FILMS OBTAINED BY GAS-JET ELECTRON BEAM PLASMA CHEMICAL VAPOR DEPOSITION

• Published in: Journal of applied mechanics and technical physics 2022-11, Vol.63 (5), p.757-764
• Main Authors: Baranov, E. A., Zamchiy, A. O., Lunev, N. A., Merkulova, I. E., Volodin, V. A., Sharafutdinov, M. R., Shapovalova, A. A.
• Format: Article
• Language: English
• Subjects: Annealing; Applications of Mathematics; Chemical vapor deposition; Classical and Continuum Physics; Classical Mechanics; Degree of crystallinity; Electron beams; Flow velocity; Fluid- and Aerodynamics; Gas jets; High temperature; Mathematical Modeling and Industrial Mathematics; Mechanical Engineering; Nanoparticles; Physics; Physics and Astronomy; Raman spectra; Silicon oxides; Thin films
• ISSN: 0021-8944; 1573-8620
• DOI: 10.1134/S0021894422050030

Thin films of amorphous nonstoichiometric silicon oxide ( a -SiO :H, where  ) are synthesized via gas-jet electron beam plasma chemical vapor deposition. The stoichiometric coefficient of the a -SiO :H films is varied within a range of 0.47–1.63 as a function of  , determined by the flow rate of the Ar–SiH 4 mixture. High-temperature annealing (at 950°C for 2 h) of a -SiO :H thin films causes the formation of crystalline silicon nanoparticles with a size of 8.3–12.3 nm. It is shown that, with an increase in  , the degree of crystallinity of annealed films becomes higher by up to 66%. It is assumed that the position of a nanocrystalline silicon peak in the Raman spectra is affected by mechanical stresses. The quantitative estimation of such a stress yields 1.0–1.7 GPa.