Magnetic transitions and coercive field variations in La1−xSrxMnO3 thin films (0.04 ≤ x ≤ 0.50)

• Published in: AIP advances 2023-02, Vol.13 (2), p.025025-025025-5
• Main Authors: Pekarek, T. M., Taylor, K., Payne, J. A., Bryant, C. T., Tavera, R. Marquez, Brown, D. T., Warusawithana, M. P.
• Format: Article
• Language: English
• Subjects: Coercivity; Doping; Electrical resistivity; Epitaxial growth; Ground state; Magnetic transitions; Magnetization; Molecular beam epitaxy; Strontium titanates; Substrates; Temperature dependence; Thin films
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/9.0000539

We have investigated the electronic and magnetic ground state of La1−xSrxMnO3 thin films, especially around doping x = 0.50 in comparison to the well studied system of x = 0.33 and the low doped system of x = 0.04. The films discussed here were grown by molecular-beam epitaxy, epitaxially strained to (001) oriented strontium titanate substrates. Apart from resistivity and magnetization measurements probing the electronic and magnetic ground state, we also study the temperature dependence of the coercive field of these samples. Our measurements reveal that the coercive field increases as the doping is changed from x = 0.33. The coercive field at 5 K for the x = 0.50 sample is Hc = 0.0450 T compared to Hc = 0.0080 T for the x = 0.33 sample. The temperature dependent coercive field measurements on the x = 0.50 sample show a dramatic cusp around 100 K that is coincident with more subtle features observed in both magnetization and resistivity data at this temperature.