Simulation and design of a high-speed and high-power modified uni-traveling carrier photodiode based on the electric field distribution in the depletion region

A modified uni-traveling carrier photodiode with an electric field control layer is proposed to achieve high-speed and high-power performance at a lower bias voltage. By inserting the 10 nm p-type InGaAs electric field control layer between the intrinsic absorption layer and space layer, the electri...

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Bibliographic Details
Published in:Applied optics (2004) 2023-02, Vol.62 (4), p.1057
Main Authors: Wang, Xuejie, Huang, Yongqing, Ren, Ren, Du, Jiawei, Yang, Mingxi, Liu, Kai, Duan, Xiaofeng, Ren, Xiaomin
Format: Article
Language:English
Subjects:
Absorption
Bias
Depletion
Electric fields
Electric potential
Heat generation
High speed
Photodiodes
Power consumption
Voltage
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Summary:A modified uni-traveling carrier photodiode with an electric field control layer is proposed to achieve high-speed and high-power performance at a lower bias voltage. By inserting the 10 nm p-type InGaAs electric field control layer between the intrinsic absorption layer and space layer, the electric field distribution in the depleted absorption layer and depleted non-absorption layer can be changed. It is beneficial for reducing power consumption and heat generation, meanwhile suppressing the space-charge effect. Compared with the original structure without the electric field control layer, the 3 dB bandwidth of the 20 µm diameter novel structure, to the best of our knowledge, is improved by 27.1% to 37.5 GHz with a reverse bias of 2 V, and the RF output power reaches 23.9 dBm at 30 GHz. In addition, under 8 V bias voltage, the bandwidth reaches 47.3 GHz.
ISSN:1559-128X
2155-3165
DOI:10.1364/AO.478663