Observation of Large Threshold Voltage Shift Induced by Pre-applied Voltage to SiO2 Gate Dielectric in Organic Field-Effect Transistors

• Published in: Electronics (Basel) 2023-02, Vol.12 (3), p.540
• Main Authors: Guo, Yifu, Deng, Junyang, Niu, Jiebin, Duan, Chunhui, Long, Shibing, Li, Mengmeng, Li, Ling
• Format: Article
• Language: English
• Subjects: Dielectrics; Electric fields; Electrodes; Field effect transistors; Internet of Things; Production costs; Self-assembled monolayers; Self-assembly; Semiconductor devices; Silicon dioxide; Threshold voltage; Transistors
• ISSN: 2079-9292; 2079-9292
• DOI: 10.3390/electronics12030540

Field-effect transistors based on organic semiconducting materials (OFETs) have unique advantages of intrinsically mechanical flexibility, simple preparation process, low manufacturing cost, and large-area preparation. Through the innovation of new material design and device structures, the performance of device parameters such as mobility, on–off current ratio, and the threshold voltage (VTH) of OFETs continues to improve. However, the VTH shift of OFETs has always been an important problem restricting their practical applications. In this work, we observe that the VTH of polymer OFETs with the widely investigated device structure of a SiO2 bottom-gate dielectric is noticeably shifted by pre-applying a large gate voltage. Such a shift in VTH remains to a large extent, even after modifying the surface of the SiO2 dielectric using a hexamethyldisilazane (HMDS) self-assembled monolayer. This behavior of VTH can be ascribed to the charge trappings at the bulk of the SiO2. In addition, the generality of this observation is further proven by using two other conjugated polymers including p-type PDPP3T and n-type PTzNDI-2FT, and a similar trend is obtained.