Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure

Effects of the surface modification by O 2 plasma exposure on the Al/Ge(111) structure have been investigated in order to get an insight into a layer transfer technique of the ultrathin Ge layer segregated on the Al/Ge(111) structure toward the device fabrication, and then the wafer bonding of the A...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-06, Vol.62 (SG), p.SG1007
Main Authors: Matsushita, Keigo, Ohta, Akio, Shibayama, Shigehisa, Tokunaga, Tomoharu, Taoka, Noriyuki, Makihara, Katsunori, Miyazaki, Seiichi
Format: Article
Language:English
Subjects:
Aluminum
Bonding strength
Chemical etching
Chemical-mechanical polishing
Contact resistance
Germanium
Hydrogen peroxide
Hydrophilic surfaces
Hydrophilicity
layer transfer
Oxidation
Oxygen plasma
segregation
Silicon dioxide
Silicon substrates
ultrathin Ge
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Summary:Effects of the surface modification by O 2 plasma exposure on the Al/Ge(111) structure have been investigated in order to get an insight into a layer transfer technique of the ultrathin Ge layer segregated on the Al/Ge(111) structure toward the device fabrication, and then the wafer bonding of the Al/Ge(111) structure to the thermally-grown SiO 2 /Si structure has been demonstrated. The O 2 plasma treatment and the subsequent pure water rinse were found to be effective to form the hydrophilic surface of the Al/Ge(111) structure with a suppression of the segregated Ge layer oxidation. The Al/Ge(111) structure with the hydrophilic surface was then bonded to the SiO 2 /Si substrate, and its bonding strength was enough to perform Ge thinning by the chemical mechanical polishing and the wet-chemical etching using H 2 O 2 -based solutions. Ohmic contact of the ring-type device pattern with the segregated Ge/Al stack was achieved by using the remaining p-type Ge substrate as the contact pads.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acb65c