Room Temperature Hydrogen Gas Sensing using Zn2TiO4 Thin Film

Zn 2 TiO 4 thin film is formed on Si/SiO 2 substrate by a spin coating process and Al is used as electrodes. This device has excellent hydrogen (H 2 ) gas sensing properties. The phase and crystal structure of the thin film was studied using X-ray diffraction (XRD). The sensor responds linearly at r...

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Bibliographic Details
Published in:IEEE sensors letters 2023-02, Vol.7 (2), p.1-4
Main Authors: Kerketta, Ujjaval, Daniel, Thomas T., Yadav, Vimal Kumar Singh, Paily, Roy P.
Format: Article
Language:English
Subjects:
Aluminum
Crystal structure
Gas detectors
Gas sensor
Gas sensors
Hydrogen
Metals
Response time
Room temperature
Sensor phenomena and characterization
Sensors
Silicon dioxide
Silicon substrates
Spin coating
Temperature sensors
Thin films
Time factors
Zinc
Zn<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">2 TiO<sub xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">4
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Description
Summary:Zn 2 TiO 4 thin film is formed on Si/SiO 2 substrate by a spin coating process and Al is used as electrodes. This device has excellent hydrogen (H 2 ) gas sensing properties. The phase and crystal structure of the thin film was studied using X-ray diffraction (XRD). The sensor responds linearly at room temperature to H 2 gas concentrations ranging from 50 ppm to 250 ppm and shows a good sensitivity toward low ppm of H 2 . The response time of the sensor is about 76 s at 250 ppm H 2 . We could fit the sensor response to the Langmuir adsorption model.
ISSN:2475-1472
DOI:10.1109/LSENS.2023.3241312