Effect of Cyano Substitution on Non‐Fullerene Acceptor for Near‐Infrared Organic Photodetectors above 1000 nm (Adv. Funct. Mater. 8/2023)

Non‐Fullerene Acceptors In article number 2211486, Seo‐Jin Ko, Jong H. Kim, Sung Cheol Yoon, and co‐workers present a new CN‐substituted non‐fullerene acceptor COTCN2, which exhibits a deeper highest occupied molecular orbital energy level and a narrower optical bandgap (< 1.10 eV). As a result,...

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Bibliographic Details
Published in:Advanced functional materials 2023-02, Vol.33 (8), p.n/a
Main Authors: Ha, Jong‐Woon, Eun, Hyeong Ju, Park, Byoungwook, Ahn, Hyungju, Hwang, Dong Ryeol, Shim, Yeong Seok, Heo, Junseok, Lee, Changjin, Yoon, Sung Cheol, Kim, Jong H., Ko, Seo‐Jin
Format: Article
Language:English
Subjects:
Charge injection
CN substitutions
Energy levels
Fullerenes
low dark current densities
Materials science
Molecular orbitals
Near infrared radiation
near‐infrared
non‐fullerene acceptors
Photometers
ultra narrow bandgaps
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Summary:Non‐Fullerene Acceptors In article number 2211486, Seo‐Jin Ko, Jong H. Kim, Sung Cheol Yoon, and co‐workers present a new CN‐substituted non‐fullerene acceptor COTCN2, which exhibits a deeper highest occupied molecular orbital energy level and a narrower optical bandgap (< 1.10 eV). As a result, the near‐infrared organic photodetector (NIR OPD) based on PTB7‐Th:COTCN2 provides high non‐detectability beyond 1000 nm with dark hole injection well suppressed due to the larger charge injection barrier. Additionally, as a practical implementation of NIR OPD, photoplethysmography sensors are successfully demonstrated.
ISSN:1616-301X
1616-3028
DOI:10.1002/adfm.202370042