The structural studies and optical characteristics of phase-segregated Ir-doped LuFeO3−δ films

• Published in: Applied physics. A, Materials science & processing Materials science & processing, 2023-03, Vol.129 (3), Article 198
• Main Authors: Polat, O., Coskun, F. M., Yildirim, Y., Sobola, D., Ercelik, M., Arikan, M., Coskun, M., Sen, C., Durmus, Z., Caglar, Y., Caglar, M., Turut, A.
• Format: Article
• Language: English
• Subjects: Applied physics; Characterization and Evaluation of Materials; Condensed Matter Physics; Crystal defects; Crystallography; Diffuse reflectance spectroscopy; Indium tin oxides; Machines; Magnetron sputtering; Manufacturing; Materials science; Nanotechnology; Optical and Electronic Materials; Optical properties; Photoluminescence; Physics; Physics and Astronomy; Processes; Raman spectroscopy; Refractivity; Silicon substrates; Spectrum analysis; Substitutes; Surfaces and Interfaces; Thin Films; X-ray diffraction
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-023-06486-4

In this work, we carefully examined how Ir substitution into Fe sites can change the band of the LuFeO 3 (LFO) material. LFO and Ir-doped LFO (LuFe 1− x Ir x O 3 or LFIO for short, where x  = 0.05 and 0.10) thin films were synthesized by utilizing magnetron sputtering techniques. The films were grown on silicon and indium tin oxide (ITO) substrates at 500 °C. The crystallographic orientation of the films was examined using X-ray diffraction (XRD) analysis. The crystallographic orientation of the thin films was examined using an X-ray diffractometer (XRD). For surface topography research, atomic force microscopy (AFM) was employed. To look for the recombination of photogenerated electron–hole pairs in the materials under investigation, photoluminescence (PL) spectroscopy was used. Raman spectroscopy is then utilized to gather data on crystal symmetry as well as disorders and defects in the oxide materials. It was demonstrated that the LFO band gap was altered from 2.35 to 2.72 eV by Ir substitution into Fe sites. Moreover, diffuse reflectance spectroscopy (DRS) was used to analyze conductivity, real and imaginary components of the dielectric constant, refractive index ( n ), extinction coefficient ( k ), and reflectance percentage.