New Insights Into Noise Characteristics of Hot Carrier Induced Defects in Polysilicon Emitter Bipolar Junction Transistors and SiGe HBTs

Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f no...

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Bibliographic Details
Published in:IEEE journal of the Electron Devices Society 2023, Vol.11, p.30-35
Main Authors: Zhu, Kunfeng, Zhang, Peijian, Xu, Zicheng, Wang, Tao, Yi, Xiaohui, Hong, Min, Yang, Yonghui, Zhang, Guangsheng, Liu, Jian, Wei, Jianan, Pu, Yang, Huang, Dong, Luo, Ting, Chen, Xian, Tang, Xinyue, Tan, Kaizhou, Chen, Wensuo
Format: Article
Language:English
Subjects:
1/f noise
Bipolar transistors
current gain
Defects
Degradation
Emitters
Hot carrier
Hot carriers
Integrated circuit reliability
interface defect
Junction transistors
LF noise
Low-frequency noise
Noise spectra
Nondestructive testing
Polysilicon
Reliability analysis
Reliability engineering
Semiconductor devices
Silicon
Silicon dioxide
Silicon germanides
Silicon germanium
Stress
Structural reliability
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Summary:Low frequency (LF) noise is a powerful and non-destructive technique for evaluating the oxide-semiconductor interface and an effective evaluating tool in characterizing electronic device's structure and reliability. In this study, we present a systematic analysis of the striking abnormal 1/f noise behavior of the hot carrier induced defects in highspeed polysilicon emitter bipolar transistors (PE-BJTs) and SiGe HBTs. Here, the comparative results before and after hot carrier degradation reveal that low frequency noise spectra are not correlated with the density and distribution of the interfacial defects, which related to Si dangling bonds reside at the SiO2/Si interface in PE-BJTs and SiGe HBTs.
ISSN:2168-6734
2168-6734
DOI:10.1109/JEDS.2023.3239341