High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes

Ga 2 O 3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga 2 O 3 MWs are still less...

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Published in:Nano research 2022-08, Vol.15 (8), p.7631-7638
Main Authors: Lu, Ya-Cong, Zhang, Zhen-Feng, Yang, Xun, He, Gao-Hang, Lin, Chao-Nan, Chen, Xue-Xia, Zang, Jin-Hao, Zhao, Wen-Bo, Chen, Yan-Cheng, Zhang, Lei-Lei, Li, Yi-Zhe, Shan, Chong-Xin
Format: Article
Language:English
Subjects:
Arrays
Atomic/Molecular Structure and Spectra
Biomedicine
Biotechnology
Chemistry and Materials Science
Condensed Matter Physics
Dark current
Electrodes
Gallium oxides
Graphene
Linear arrays
Materials Science
Nanotechnology
Nanowires
Photometers
Research Article
Tin
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Summary:Ga 2 O 3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga 2 O 3 MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga 2 O 3 MWs, possessing a light/dark current ratio of 10 7 and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga 2 O 3 MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga 2 O 3 MWs, and thus may push forward their future applications.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-022-4341-3