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High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes
Ga 2 O 3 has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga 2 O 3 MWs are still less...
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| Published in: | Nano research 2022-08, Vol.15 (8), p.7631-7638 |
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| Main Authors: | , , , , , , , , , , , |
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| container_end_page | 7638 |
| container_issue | 8 |
| container_start_page | 7631 |
| container_title | Nano research |
| container_volume | 15 |
| creator | Lu, Ya-Cong Zhang, Zhen-Feng Yang, Xun He, Gao-Hang Lin, Chao-Nan Chen, Xue-Xia Zang, Jin-Hao Zhao, Wen-Bo Chen, Yan-Cheng Zhang, Lei-Lei Li, Yi-Zhe Shan, Chong-Xin |
| description | Ga
2
O
3
has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga
2
O
3
MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga
2
O
3
MWs, possessing a light/dark current ratio of 10
7
and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga
2
O
3
MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga
2
O
3
MWs, and thus may push forward their future applications. |
| doi_str_mv | 10.1007/s12274-022-4341-3 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2779276176</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2779276176</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-5817458966c57fa3712e8363bb6ad9dd933250f745f669d61f04af313895b5283</originalsourceid><addsrcrecordid>eNp1kM1OwzAQhCMEEqXwANwscTb4J7HjI6qgRarUA3C2nMRuUyVxWLugvj2uAuLEXnatnZm1viy7peSeEiIfAmVM5pgwhnOeU8zPshlVqsQk1fnvTFl-mV2FsCdEMJqXs-ywarc7PFpwHnoz1BYF3xnAVdcODRp3PvrGRltHD8gAmGNAtR9ChEMdbYMc-B69DrjxY3otDdtw1Lc1-K8WbECfrUGjidHCkNa2SzmQ8sJ1duFMF-zNT59n789Pb4sVXm-WL4vHNa55oSIuSirzolRC1IV0hkvKbMkFryphGtU0inNWEJc0TgjVCOpIbhynvFRFVbCSz7O7KXcE_3GwIeq9P8CQTmompWJSUCmSik6q9O8QwDo9QtsbOGpK9ImunujqRFef6GqePGzyhKQdthb-kv83fQM2gX1_</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2779276176</pqid></control><display><type>article</type><title>High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes</title><source>Springer Nature</source><creator>Lu, Ya-Cong ; Zhang, Zhen-Feng ; Yang, Xun ; He, Gao-Hang ; Lin, Chao-Nan ; Chen, Xue-Xia ; Zang, Jin-Hao ; Zhao, Wen-Bo ; Chen, Yan-Cheng ; Zhang, Lei-Lei ; Li, Yi-Zhe ; Shan, Chong-Xin</creator><creatorcontrib>Lu, Ya-Cong ; Zhang, Zhen-Feng ; Yang, Xun ; He, Gao-Hang ; Lin, Chao-Nan ; Chen, Xue-Xia ; Zang, Jin-Hao ; Zhao, Wen-Bo ; Chen, Yan-Cheng ; Zhang, Lei-Lei ; Li, Yi-Zhe ; Shan, Chong-Xin</creatorcontrib><description>Ga
2
O
3
has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga
2
O
3
MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga
2
O
3
MWs, possessing a light/dark current ratio of 10
7
and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga
2
O
3
MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga
2
O
3
MWs, and thus may push forward their future applications.</description><identifier>ISSN: 1998-0124</identifier><identifier>EISSN: 1998-0000</identifier><identifier>DOI: 10.1007/s12274-022-4341-3</identifier><language>eng</language><publisher>Beijing: Tsinghua University Press</publisher><subject>Arrays ; Atomic/Molecular Structure and Spectra ; Biomedicine ; Biotechnology ; Chemistry and Materials Science ; Condensed Matter Physics ; Dark current ; Electrodes ; Gallium oxides ; Graphene ; Linear arrays ; Materials Science ; Nanotechnology ; Nanowires ; Photometers ; Research Article ; Tin</subject><ispartof>Nano research, 2022-08, Vol.15 (8), p.7631-7638</ispartof><rights>Tsinghua University Press 2022</rights><rights>Tsinghua University Press 2022.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-5817458966c57fa3712e8363bb6ad9dd933250f745f669d61f04af313895b5283</citedby><cites>FETCH-LOGICAL-c359t-5817458966c57fa3712e8363bb6ad9dd933250f745f669d61f04af313895b5283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Lu, Ya-Cong</creatorcontrib><creatorcontrib>Zhang, Zhen-Feng</creatorcontrib><creatorcontrib>Yang, Xun</creatorcontrib><creatorcontrib>He, Gao-Hang</creatorcontrib><creatorcontrib>Lin, Chao-Nan</creatorcontrib><creatorcontrib>Chen, Xue-Xia</creatorcontrib><creatorcontrib>Zang, Jin-Hao</creatorcontrib><creatorcontrib>Zhao, Wen-Bo</creatorcontrib><creatorcontrib>Chen, Yan-Cheng</creatorcontrib><creatorcontrib>Zhang, Lei-Lei</creatorcontrib><creatorcontrib>Li, Yi-Zhe</creatorcontrib><creatorcontrib>Shan, Chong-Xin</creatorcontrib><title>High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes</title><title>Nano research</title><addtitle>Nano Res</addtitle><description>Ga
2
O
3
has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga
2
O
3
MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga
2
O
3
MWs, possessing a light/dark current ratio of 10
7
and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga
2
O
3
MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga
2
O
3
MWs, and thus may push forward their future applications.</description><subject>Arrays</subject><subject>Atomic/Molecular Structure and Spectra</subject><subject>Biomedicine</subject><subject>Biotechnology</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter Physics</subject><subject>Dark current</subject><subject>Electrodes</subject><subject>Gallium oxides</subject><subject>Graphene</subject><subject>Linear arrays</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Nanowires</subject><subject>Photometers</subject><subject>Research Article</subject><subject>Tin</subject><issn>1998-0124</issn><issn>1998-0000</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNp1kM1OwzAQhCMEEqXwANwscTb4J7HjI6qgRarUA3C2nMRuUyVxWLugvj2uAuLEXnatnZm1viy7peSeEiIfAmVM5pgwhnOeU8zPshlVqsQk1fnvTFl-mV2FsCdEMJqXs-ywarc7PFpwHnoz1BYF3xnAVdcODRp3PvrGRltHD8gAmGNAtR9ChEMdbYMc-B69DrjxY3otDdtw1Lc1-K8WbECfrUGjidHCkNa2SzmQ8sJ1duFMF-zNT59n789Pb4sVXm-WL4vHNa55oSIuSirzolRC1IV0hkvKbMkFryphGtU0inNWEJc0TgjVCOpIbhynvFRFVbCSz7O7KXcE_3GwIeq9P8CQTmompWJSUCmSik6q9O8QwDo9QtsbOGpK9ImunujqRFef6GqePGzyhKQdthb-kv83fQM2gX1_</recordid><startdate>20220801</startdate><enddate>20220801</enddate><creator>Lu, Ya-Cong</creator><creator>Zhang, Zhen-Feng</creator><creator>Yang, Xun</creator><creator>He, Gao-Hang</creator><creator>Lin, Chao-Nan</creator><creator>Chen, Xue-Xia</creator><creator>Zang, Jin-Hao</creator><creator>Zhao, Wen-Bo</creator><creator>Chen, Yan-Cheng</creator><creator>Zhang, 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Lei-Lei</au><au>Li, Yi-Zhe</au><au>Shan, Chong-Xin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes</atitle><jtitle>Nano research</jtitle><stitle>Nano Res</stitle><date>2022-08-01</date><risdate>2022</risdate><volume>15</volume><issue>8</issue><spage>7631</spage><epage>7638</epage><pages>7631-7638</pages><issn>1998-0124</issn><eissn>1998-0000</eissn><abstract>Ga
2
O
3
has been regarded as a promising material for solar-blind detection due to its ultrawide bandgap and low growth cost. Although semiconductor microwires (MWs) possess unique optical and electronic characteristics, the performances of photodetectors developed from Ga
2
O
3
MWs are still less than satisfactory. Herein, we demonstrate high-performance solar-blind photodetectors based on Sn-doped Ga
2
O
3
MWs, possessing a light/dark current ratio of 10
7
and a responsivity of 2,409 A/W at 40 V. Moreover, a 1 × 10 solar-blind photodetector linear array is developed based on the Sn-doped Ga
2
O
3
MWs via a patterned-electrodes method. And clear solar-blind images are obtained by using the photodetector array as the imaging unit of a solar-blind imaging system. The results provide a convenient way to construct high-performance solar-blind photodetector arrays based on Ga
2
O
3
MWs, and thus may push forward their future applications.</abstract><cop>Beijing</cop><pub>Tsinghua University Press</pub><doi>10.1007/s12274-022-4341-3</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1998-0124 |
| ispartof | Nano research, 2022-08, Vol.15 (8), p.7631-7638 |
| issn | 1998-0124 1998-0000 |
| language | eng |
| recordid | cdi_proquest_journals_2779276176 |
| source | Springer Nature |
| subjects | Arrays Atomic/Molecular Structure and Spectra Biomedicine Biotechnology Chemistry and Materials Science Condensed Matter Physics Dark current Electrodes Gallium oxides Graphene Linear arrays Materials Science Nanotechnology Nanowires Photometers Research Article Tin |
| title | High-performance solar-blind photodetector arrays constructed from Sn-doped Ga2O3 microwires via patterned electrodes |
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