Molecular Beam Epitaxy of Mixed h-GaTe/m-GaTe Thin Films on GaAs(001) Substrates: Structural and Photoluminescence Properties

Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h - and m -GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is estab...

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Bibliographic Details
Published in:Journal of experimental and theoretical physics 2022-12, Vol.135 (6), p.853-859
Main Authors: Sorokin, S. V., Sedova, I. V., Avdienko, P. S., Firsov, D. D., Komkov, O. S., Galimov, A. I., Yagovkina, M. A., Rakhlin, M. V.
Format: Article
Language:English
Subjects:
Classical and Quantum Gravitation
Dielectric films
Elementary Particles
Epitaxial growth
Epitaxy
Gallium arsenide
Low temperature
Molecular beam epitaxy
Particle and Nuclear Physics
Phase composition
Photoluminescence
Physics
Physics and Astronomy
Quantum Field Theory
Relativity Theory
Solid State Physics
Solids and Liquids
Substrates
Thin films
X ray powder diffraction
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Summary:Thin GaTe films were grown by molecular beam epitaxy (MBE) on GaAs(001) substrates. X-ray powder diffraction confirmed the coexistence of the h - and m -GaTe phases in all grown layers. A quantitative correlation between the MBE growth conditions and the phase composition of the grown films is established, and the upper limit of the MBE growth temperature for thin GaTe/GaAs(001) films is experimentally determined. New data are presented confirming the defect-related origin of the broad emission line with an energy maximum of ~1.45–1.46 eV, which dominates the low-temperature photoluminescence spectra of the grown GaTe/GaAs(001) layers.
ISSN:1063-7761
1090-6509
DOI:10.1134/S1063776122120093