Optical properties of Ga-doped AlN nanowires

We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the spontaneous formation of nanometric carrier localization centers. Accordingly, for single nanowires, we observed a collection of sharp cathodoluminescence lines in a wavelength range spanning from 220 to 300 nm....

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Bibliographic Details
Published in:Applied physics letters 2023-02, Vol.122 (9)
Main Authors: Vermeersch, Rémy, Jacopin, Gwénolé, Robin, Eric, Pernot, Julien, Gayral, Bruno, Daudin, Bruno
Format: Article
Language:English
Subjects:
Absorption spectra
Applied physics
Cathodoluminescence
Engineering Sciences
Light emitting diodes
Nanowires
Optical properties
Physics
Room temperature
Temperature dependence
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Summary:We show that intentional Ga doping of AlN nanowires in the 0.01%–0.5% range leads to the spontaneous formation of nanometric carrier localization centers. Accordingly, for single nanowires, we observed a collection of sharp cathodoluminescence lines in a wavelength range spanning from 220 to 300 nm. From temperature-dependent cathodoluminescence, a ratio between the intensity at room temperature and 5 K of 20–30% is measured. We found that an ensemble of Ga-doped AlN nanowires exhibits a wide-band cathodoluminescence emission, which opens the path to the realization of efficient UV-C light emitting diodes covering a wide part of DNA absorption band.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0137424