Surface plasmon enhanced InAs-based mid-wavelength infrared photodetector

High performance photodetectors operating in the mid-wavelength infrared spectral range are of great significance in many applications such as defense, surveillance, gas sensing, and night vision. A key parameter in the design of infrared detectors is the thickness of the absorber layer; reaching hi...

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Bibliographic Details
Published in:Applied physics letters 2023-02, Vol.122 (9)
Main Authors: Zhou, Ziji, Lin, Hongyu, Pan, Xiaohang, Tan, Chong, Zhou, Dongjie, Wen, Zhengji, Sun, Yan, Hu, Shuhong, Dai, Ning, Chu, Junhao, Hao, Jiaming
Format: Article
Language:English
Subjects:
Absorbers
Applied physics
Broadband
Design parameters
Gas sensors
Indium arsenides
Infrared detectors
Night vision
Photometers
Thickness
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Summary:High performance photodetectors operating in the mid-wavelength infrared spectral range are of great significance in many applications such as defense, surveillance, gas sensing, and night vision. A key parameter in the design of infrared detectors is the thickness of the absorber layer; reaching high absorption with a thin absorber layer can significantly enhance the performance of the device. In this work, we demonstrate the enhancement of InAs-base infrared detectors using surface plasmon nanostructures. Experimental results show that our device exhibits broadband enhancement compared to the reference with an increase in peak responsivity of about 50%. Further analysis shows that the enhancement of the device is attributed to the near-field localization effect of the plasma structure, which is well demonstrated by the experimental dual-peak spectrum. Such mechanisms provide valuable insight into the plasmon-enhanced infrared photodetector.
ISSN:0003-6951
1077-3118
DOI:10.1063/5.0140370