Growth and characterization of Cu–Ni–Sn–S films electrodeposited at different applied potentials

Cu 2 NiSnS 4 (CNTS) absorber layers are elaborated by electrodeposition at various applied potentials followed by sulfurization treatment at 450 °C under sulfur atmosphere. The microstructural investigations revealed the presence of Cu 4 SnS 4 secondary phases which can be reduced using an applied p...

Full description

Saved in:
Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2023-03, Vol.34 (8), p.760, Article 760
Main Authors: El Khouja, Outman, Nouneh, Khalid, Ebn Touhami, Mohamed, Matei, Elena, Stancu, Viorica, Enculescu, Monica, Galca, Aurelian Catalin
Format: Article
Language:English
Subjects:
Annealing
Aqueous solutions
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Electrochemical impedance spectroscopy
Electrodeposition
Electrodes
Electrolytes
Glass substrates
Hydrogen evolution
Investigations
Materials Science
Molybdenum
Morphology
Optical and Electronic Materials
Physics
Spectrum analysis
Sulfur
Sulfurization
Voltammetry
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Cu 2 NiSnS 4 (CNTS) absorber layers are elaborated by electrodeposition at various applied potentials followed by sulfurization treatment at 450 °C under sulfur atmosphere. The microstructural investigations revealed the presence of Cu 4 SnS 4 secondary phases which can be reduced using an applied potential of −1.15 V vs. Ag/AgCl. Using the corresponding cathodic potential for Ni 2+ , the competing detrimental hydrogen evolution regresses the morphology and composition. The film with the highest Ni concentration has a band gap of 1.44 eV as inferred from diffuse reflectance data. The Randles cell model is probed by electrochemical impedance spectroscopy.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-023-10173-8