Thermal quenching of luminescence in erbium doped semiconductors

The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58–100 meV, characteristic of a localized...

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Bibliographic Details
Published in:Pramāṇa 1997-06, Vol.48 (6), p.1145-1149
Main Authors: Chanda, B, Bose, D N
Format: Article
Language:English
Subjects:
Activation energy
Augers
Erbium
Gallium indium arsenide phosphide
Luminescence
Temperature dependence
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Summary:The nature of the temperature dependence of luminescence intensity from Er+ ions in GaInAsP, Si, InP, GaAs, AlGaAs, ZnTe, as observed by Favennecet al [1] has been examined in terms of a double exponential model. The smaller activation energy is found to be 58–100 meV, characteristic of a localized energy barrier at the Er+ centre while the higher activation energy is approximately 0.8Eg attributed to an Auger non-radiative process of carrier excitation into bands. This model has been found to describe the observed temperature dependences with reasonably good agreement.
ISSN:0304-4289
0973-7111
DOI:10.1007/BF02845889