Electronic structure of FCC phase in Fe−Mn−Si based shape memory alloys and its stability

• Published in: Science China. Technological sciences 2001-10, Vol.44 (5), p.486-492
• Main Authors: Wan, Jianfeng, Chen, Shipu, Xu, Zuyao
• Format: Article
• Language: English
• Subjects: Density of states; Electronic structure; Energy gap; Energy levels; First principles; Manganese; Martensite; Martensitic transformations; Shape memory alloys; Silicon base alloys; Stacking fault energy; Structural stability
• ISSN: 1006-9321; 1674-7321; 1862-281X; 1869-1900
• DOI: 10.1007/BF02916734

The relationship between the electronic structure of FCC phase in Fe−Mn−Si alloy and its stability has been studied by using the discrete variational method based on the first principle. The reason why Mn and Si elements have different influences on the stacking fault energy may be related to the electron concentration (e/a). Si reduces the hole number of 3d band while Mn is rather complicated. The binding energy has been calculated and the experimental results that martensite start temperature (Ms) varies with SI and Mn are explained. When the external stress is exerted in three directions, the electronic structure, the total density of states, the energy gap at Fermi energy level(EF) and the energy degeneracy will change into other states. When the different external stresses are exerted in one direction, 3d or 4s orbital occupations of the central atom decrease, the partial density of states seems to be thinner and its peak increases atEF, the bond orbit shrinks in the direction of the external stress and another bond orbit comes out vertically. These lead to an a decrease in the structural stability and an increase In Ms temperature under the extemal stress.