Blue light emission from C+ implanted SiO2 films

VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectron...

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Bibliographic Details
Published in:Chinese science bulletin 1997-10, Vol.42 (19), p.1670-1671
Main Authors: Zhao, Jun, Yang, Gengqing, Lin, Zixin, Jiang, Binyao, Zhou, Zuyao, Liu, Xianghuai
Format: Article
Language:English
Subjects:
Light emission
Silicon dioxide
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Summary:VISIBLE photoluminescence (PL) from nanostructured group Ⅳ semiconductors has attractedgreat attention, since visible PL at room temperature(RT) from porous silicon was discoveredby Canham in 1990. This makes it possible that the conventional planar technology of sili-con may be used in optoelectronics devices directly. Moreover, it is also an ideal object in
ISSN:1001-6538
2095-9273
1861-9541
2095-9281
DOI:10.1007/BF02882584