A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

An accurate and broad-band method for hetero junction bipolar transistors (HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit for the HBT under a forward bias condition is proposed for extraction of access resistance and parasitic inductance. This method...

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Published in:Wuhan University journal of natural sciences 2005-03, Vol.10 (2), p.405-409
Main Authors: Xin-zhi, Shi, Hai-wen, Liu, Xiao-wei, Sun, Yan-feng, Che, Zhi-qun, Cheng, Zheng-fan, Li
Format: Article
Language:English
Subjects:
Bias
Equivalent circuits
Frequency ranges
Heterojunction bipolar transistors
Inductance
Mathematical models
Optimization
Parameters
Parasitics (electronics)
Semiconductor devices
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description An accurate and broad-band method for hetero junction bipolar transistors (HBT) small-signal model parameters-extraction is presented in this paper. An equivalent circuit for the HBT under a forward bias condition is proposed for extraction of access resistance and parasitic inductance. This method differs from previous ones by extracting the equivalent circuit parameters without using special test structure or global numerical optimization techniques. The main advantage of this method is that a unique and physically meaningful set of intrinsic parameters is extracted from im pedance and admittance representation of the measuredS-parameters in the frequency range of 1–12 GHz under different bias conditions. The method yields a deviation of less than 5% between measured and modeledS-parameters.
doi_str_mv 10.1007/BF02830676
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1993-4998
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subjects Bias
Equivalent circuits
Frequency ranges
Heterojunction bipolar transistors
Inductance
Mathematical models
Optimization
Parameters
Parasitics (electronics)
Semiconductor devices
title A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model
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