Effects of post-deposition annealing temperature and atmosphere on interface properties in ALD Al2O3/plasma oxidation GeOx/(111) and (100) n-Ge MOS structures

In this work, the effects of post-deposition annealing (PDA) on Al2O3/GeOx/(111) and (100) n-Ge structures are experimentally studied with changing annealing temperatures from 300 °C to 650 °C in a vacuum, N2 and O2 atmosphere in order to clarify the stability of the MOS interface properties under h...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-04, Vol.62 (SC), p.SC1089
Main Authors: Han, Xueyang, Chia-Tsong Chen, Mengnan Ke, Zhao, Ziqiang, Toprasertpong, Kasidit, Takenaka, Mitsuru, Takagi, Shinichi
Format: Article
Language:eng ; jpn
Subjects:
Aluminum oxide
Annealing
Deposition
Germanium oxides
High temperature
Interface stability
Interfacial properties
Oxidation
Temperature
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Summary:In this work, the effects of post-deposition annealing (PDA) on Al2O3/GeOx/(111) and (100) n-Ge structures are experimentally studied with changing annealing temperatures from 300 °C to 650 °C in a vacuum, N2 and O2 atmosphere in order to clarify the stability of the MOS interface properties under high-temperature annealing. A decrease in Dit and an increase in the oxide capacitance with increasing PDA temperature is observed up to 500 ∼ 600 °C, depending on the annealing atmosphere and surface orientation. The minimum Dit of ∼3 × 1011 eV−1cm−2 is achieved for (111) Ge after PDA at 550 °C and 600 °C in N2/O2 or vacuum. This trend is similar to the (100) MOS interfaces and a similar amount of minimum Dit is obtained. These results suggest that the present Al2O3/GeOx/Ge interfaces are suitable for the formation of the Ge-On-insulator (GOI) back interfaces by the wafer bonding process in the Smart-cut, where high-temperature annealing is indispensable.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acbb89