Experimental studies of N~+ implantation into CVD diamond thin films

• Published in: Science China. Technological sciences 1997-08, Vol.40 (4), p.361-368
• Main Author: 辛火平 林成鲁 王建新 邹世昌 石晓红 林梓鑫 周祖尧 刘祖刚
• Format: Article
• Language: English
• Subjects: Backscattering; bond; Carbon; Carbon nitride; Chemical bonds; Covalence; covalent; Covalent bonds; C≡N; deep-level; diamond; Diamond films; electrically; Electrons; Four point probe method; Fourier transforms; Graphitization; Implantation; impurity; inactive; Infrared absorption; into; nitride; Nitrogen; photoelec-tron; Photoelectrons; Photoluminescence; Raman; Raman spectroscopy; Rutherford backscattering spectroscopy; spec-troscopy; spectroscopy; Spectrum analysis; Thin films; ultraviolet; UV-PL; X ray photoelectron spectroscopy; X-ray; XPS
• ISSN: 1674-7321; 1006-9321; 1869-1900; 1862-281X
• DOI: 10.1007/bf02919421

The effects of N+ implantation under various conditions on CVD diamond films were analyzed with Raman spectroscopy, four-point probe method, X-ray diffraction (XRD), Rutherford backseattering spectroscopy (RBS), ultraviolet photoluminescence spectroscopy (UV-PL), Fourier transformation infrared absorption spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The results show that the N+ implantation doping without any graphitization has been successfully realized when 100 keV N+ ions at a dosage of 2 × 1016 cm-2 were implanted into diamond films at 550℃ . UV-PL spectra indicate that the implanted N+ ions formed an electrically inactive deep-level impurity in diamond films. So the sheet resistance of the sample after N+ implantation changed little. Carbon nitride containing C≡N covalent bond has been successfully synthesized by 100 keV, 1.2×1018 N/cm2 N+ implantation into diamond films. Most of the implanted N+ ions formed C≡N covalent bonds with C atoms. The others were free state nitroge