Evaluation of the Effect of FinFET Structure Parameters on Electrical Characteristics Using TCAD Modeling Tools

Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied.

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Bibliographic Details
Published in:Russian microelectronics 2022-12, Vol.51 (8), p.644-648
Main Authors: Petrosyants, K. O., Silkin, D. S., Popov, D. A.
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
Mathematical models
Modelling
Parameters
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Description
Summary:Using TCAD modeling, the effect of changing the FinFET structure parameters, such as gate stack layer sizes, fin shape, or doping levels, on the electrical characteristics of the device is studied.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739722080054