A Comparative Study on the Polarization, Reliability, and Switching Dynamics of HfO2-ZrO2-HfO2 and ZrO2-HfO2-ZrO2 Superlattice Ferroelectric Films

In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically investigated. Compared with that of the ZHZ device, a higher value of remnant polarization ([Formula Omitted] for...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2023-04, Vol.70 (4), p.1802
Main Authors: Li, Kaixuan, Peng, Yue, Xiao, Wenwu, Liu, Fenning, Zhang, Yueyuan, Feng, Ze, Dong, Hong, Liu, Yan, Yue Hao, Han, Genquan
Format: Article
Language:English
Subjects:
Comparative studies
Ferroelectric materials
Ferroelectricity
Frequency stability
Hafnium oxide
Ion migration
Polarization
Reliability
Superlattices
Zirconium dioxide
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Summary:In this article, the effect of starting layer on the ferroelectric properties and reliability of HfO2-ZrO2-HfO2 (HZH) and ZrO2-HfO2-ZrO2 (ZHZ) superlattice (SL) films were systematically investigated. Compared with that of the ZHZ device, a higher value of remnant polarization ([Formula Omitted] for the HZH device was achieved. However, the ZHZ structure exhibits a better wake-up performance and frequency stability than HZH, as well as a higher inversion speed and more endurance cycles. Accordingly, a hybrid model involving ferroelectric (FE) polarization and interfacial ion migration is proposed. This study is helpfxg1ul for understanding and optimizing the HfO2-based FE films for non-volatile memory applications.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2023.3248538