Interface State Density Modification and Dielectric Reliability Enhancement of ErTixOy/Al2O3/InP Laminated Stacks

• Published in: IEEE transactions on electron devices 2023-04, Vol.70 (4), p.1795
• Main Authors: Qiao, Lesheng, He, Gang, Lu, Jinyu, Wu, Qiuju, Yao, Bo, Fang, Zebo
• Format: Article
• Language: English
• Subjects: Aluminum oxide; Atomic layer epitaxy; Density; Electrical properties; Erbium; Indium phosphides; Leakage current; Photoelectrons; Substrates; Titanium; X ray photoelectron spectroscopy
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2023.3246440

Co-sputtering-derived ErTixOy gate dielectric films were deposited on atomic layer deposition (ALD)-derived Al2O3-passivated InP substrates. The interface chemistry and electrical properties of ErTixOy/Al2O3/InP MOS capacitors were investigated as a function of Er/Ti X-ray photoelectron spectroscopy (XPS) measurements, and electrical tests have revealed that an atomic ratio of 3.7/5.2 of erbium to titanium can effectively modulate the interface chemistry and obtain optimized electrical properties, achieving a large dielectric constant of 26.4, a low density of leakage current of [Formula Omitted] A/cm2, and an enhanced breakdown properties ([Formula Omitted] V and [Formula Omitted] s on Si). Furthermore, the density of interface states ([Formula Omitted] has been evaluated based on the conductance method, and leakage current mechanisms are investigated in the temperature range of 77–377 K. Current results have indicated that ErTixOy is a ternary oxide gate dielectric with superior performance, which is of great significance for the development and exploration of new gate dielectrics for CMOS devices.