High-order mode solid mounted resonators with polarity inverted multilayered GeAlN/AlN films

High frequency bulk acoustic wave (BAW) resonators for beyond 5 G communications have low Q values and electromechanical coupling because of their ultra-thin piezoelectric monolayer films. Polarity inverted multilayered film BAW resonators operating in high-order mode resonance can have thicker piez...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-07, Vol.62 (SJ), p.SJ8008
Main Authors: Sekimoto, Jun, Suzuki, Masashi, Kakio, Shoji
Format: Article
Language:English
Subjects:
Acoustic waves
high-frequency BAW resonator
Monolayers
Piezoelectricity
polarity inverted AlN film
Resonators
solid mounted resonator
Thickness
Thin films
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Summary:High frequency bulk acoustic wave (BAW) resonators for beyond 5 G communications have low Q values and electromechanical coupling because of their ultra-thin piezoelectric monolayer films. Polarity inverted multilayered film BAW resonators operating in high-order mode resonance can have thicker piezoelectric layers than monolayer BAW resonators. In this paper, we fabricated and evaluated two- to four-layered polarity inverted GeAlN/AlN film solid mounted resonators (SMRs). They resonated in high-order mode. Their total film thicknesses were approximately two- to four-times thicker than that of a monolayer AlN film SMR. The polarity inverted GeAlN/AlN film SMRs had higher Q values than the monolayer SMR.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acc3a6