Electrical Characterization by Counter-Doped Pocket Design in Tunnel FETs

The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and pocket can enhance TFET electrical characteristics...

Full description

Saved in:
Bibliographic Details
Published in:IEEE access 2023-01, Vol.11, p.1-1
Main Authors: Nam, Ki Ryung, Kim, Kwang Soo, Choi, Woo Young
Format: Article
Language:English
Subjects:
Conduction bands
counter-doped pocket
Doping
Electric fields
Electric variables
Electrical properties
Field effect transistors
Junctions
Logic gates
low net-doped region
Optimization
pocket width
Semiconductor devices
TFETs
Tunnel field-effect transistor (TFET)
Tunneling
tunneling width
Tunnels
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and pocket can enhance TFET electrical characteristics such as on-current ( I on ) and subthreshold swing (SS) with fine on-off current ratio ( I on / I off ). By optimizing the length of the low net-doped region, I on increased 14.6 times and the SS is reduced by 34.6 % compared with the TFET where the low net-doped region was not considered. Furthermore, guidelines for designing counter-doped pocket are proposed considering the low net-doped region. The local minimum in the conduction band can be used to further improve the on-current and SS performance by adjusting the pocket width and doping concentration. To avoid pocket-induced SS degradation, the pocket doping concentration must also be taken into account when determining the optimal value of the pocket width and vice versa.
ISSN:2169-3536
2169-3536
DOI:10.1109/ACCESS.2023.3262285