Electrical Characterization by Counter-Doped Pocket Design in Tunnel FETs

• Published in: IEEE access 2023-01, Vol.11, p.1-1
• Main Authors: Nam, Ki Ryung, Kim, Kwang Soo, Choi, Woo Young
• Format: Article
• Language: English
• Subjects: Conduction bands; counter-doped pocket; Doping; Electric fields; Electric variables; Electrical properties; Field effect transistors; Junctions; Logic gates; low net-doped region; Optimization; pocket width; Semiconductor devices; TFETs; Tunnel field-effect transistor (TFET); Tunneling; tunneling width; Tunnels
• ISSN: 2169-3536; 2169-3536
• DOI: 10.1109/ACCESS.2023.3262285

The effects of low net-doped region on the electrical performance of tunnel field-effect transistors (TFETs) are investigated using TCAD simulation. Compared with previous studies, it is observed that the low net-doped region between the source and pocket can enhance TFET electrical characteristics such as on-current ( I on ) and subthreshold swing (SS) with fine on-off current ratio ( I on / I off ). By optimizing the length of the low net-doped region, I on increased 14.6 times and the SS is reduced by 34.6 % compared with the TFET where the low net-doped region was not considered. Furthermore, guidelines for designing counter-doped pocket are proposed considering the low net-doped region. The local minimum in the conduction band can be used to further improve the on-current and SS performance by adjusting the pocket width and doping concentration. To avoid pocket-induced SS degradation, the pocket doping concentration must also be taken into account when determining the optimal value of the pocket width and vice versa.