Numerical Simulation of Temperature Field Dynamics in Single-Crystal Silicon at Repetitively-Pulsed High-Intensity Ion Implantation and Energy Impact on the Surface Layer

• Published in: Russian physics journal 2023-03, Vol.65 (11), p.1862-1866
• Main Authors: Ivanova, A. I., Bleykher, G. A., Vakhrushev, D. O., Korneva, O. S.
• Format: Article
• Language: English
• Subjects: Analysis; Condensed Matter Physics; Diffusion layers; Enhanced diffusion; Hadrons; Heavy Ions; Ion beams; Ion implantation; Lasers; Mathematical and Computational Physics; Nuclear Physics; Numerical analysis; Optical Devices; Optics; Photonics; Physics; Physics and Astronomy; Radiation effects; Silicon; Simulation methods; Single crystals; Surface layers; Temperature distribution; Theoretical; Thermal conductivity
• ISSN: 1064-8887; 1573-9228
• DOI: 10.1007/s11182-023-02843-1

The surface layer modification of materials and coatings by ion beams is used in many fields of science and technology. The high-intensity implantation by ion beams with high power density and submillisecond duration, implies a significant pulsed heating of the irradiated surface layer, followed by its cooling due to the heat removal deep in the material thanks to its thermal conductivity and the implementation of repetitivelypulsed radiation-enhanced diffusion of atoms to depths exceeding the projective ion range. Based on the numerical simulation, the paper studies the temperature field dynamics in a silicon target at single-pulse and repetitively-pulsed submillisecond ion beams with 109 W/m2 pulsed power density. Temperature conditions are determined for the ion-implanted layer, which correspond to that of the radiation-induced diffusion of implanted elements, while the temperature in the matrix material does not lead to a deterioration of its microstructure and properties.