Interfacial Characteristics and Optical Properties of InAs/InAsSb Type II Superlattices for the Mid‐Infrared Operation

• Published in: Physica status solidi. PSS-RRL. Rapid research letters 2023-04, Vol.17 (4), p.n/a
• Main Authors: Liu, Mengying, Shi, Chao, Li, Weijie, Nan, Pengfei, Fang, Xuan, Ge, Binghui, Xu, Zhi, Wang, Dengkui, Fang, Dan, Wang, Xiaohua, Li, Jiaming, Zeng, Liuqin, Du, Peng, Li, Jinhua
• Format: Article
• Language: English
• Subjects: Antimony; Electric fields; Epitaxial layers; Infrared detectors; interfaces; Interfacial properties; Optical properties; Optoelectronic devices; Periodic structures; Phase contrast; Photoluminescence; Scanning transmission electron microscopy; Superlattices; thin films; Transmission electron microscopy; X-ray diffraction
• ISSN: 1862-6254; 1862-6270
• DOI: 10.1002/pssr.202200412

Identifying interfacial properties and discussing optical properties of antimony‐based type II superlattices are the key factors for developing high performance of infrared optoelectronic devices. Herein, the multi‐epitaxy‐layered structure of a mid‐wavelength‐responsive infrared detector with an InAs/InAsSb superlattice as an active area layer is grown and investigated. High‐resolution X‐ray diffraction, high‐resolution transmission electron microscopy, and the geometric phase analysis indicate epitaxial layers of high crystalline quality and small lattice mismatches. The electric field results obtained by differential phase contrast scanning transmission electron microscopy further confirm the sharp interface states and good periodic structure of the as‐grown samples. The photoluminescence spectrum shows that the photoluminescence signal center is 5.4 μm at 75 K, even at 320 K, the sample still maintains a photoluminescence signal of 6.2 μm. High‐quality InAs/InAsSb epitaxial growth and internal electric field characterization were carried out. The samples have sharp interfaces and periodic crystal structures, and exhibit excellent mid‐infrared luminescence at high temperature (320 K).