Growth Features and Phase Composition of Hf–Sc–O thin Films Synthesized by Atomic Layer Deposition

• Published in: Journal of structural chemistry 2023-03, Vol.64 (3), p.424-436
• Main Authors: Petukhova, D. E., Vikulova, E. S., Korolkov, I. V., Khmel, S. Ya, Lebedev, M. S.
• Format: Article
• Language: English
• Subjects: Atomic; Atomic layer epitaxy; Atomic/Molecular Structure and Spectra; Chemical composition; Chemistry; Chemistry and Materials Science; Ellipsometry; Film thickness; Inorganic Chemistry; Mixed oxides; Molecular; Optical and Plasma Physics; Optical properties; Phase composition; Photoelectrons; Physical Chemistry; Scandium; Single crystals; Solid State Physics; Synthesis; Thin films; Wafers; Wave diffraction
• ISSN: 0022-4766; 1573-8779
• DOI: 10.1134/S0022476623030083

The Hf–Sc–O films are synthesized by atomic layer deposition using hafnium tetrakis-diethylamide (Hf(N(C 2 H 5 ) 2 ) 4 , TDEAH), scandium tris-methylcyclopentadienyl (Sc(C 5 H 4 CH 3 ) 3 ), and water at 300 °C on (100) single crystal silicon wafers from SiO х oriented microrope arrays (OMRA). Samples are analyzed by a number of physicochemical techniques: single wave ellipsometry, X-ray photoelectron spectroscopy, X-ray diffraction, transmission and scanning electron microscopy. Growth per cycle values (a film thickness increase in one reaction step) for pure and mixed oxides are determined, phases formed in the films are characterized, the relationship between the surface morphology and the chemical composition is found, and the optical properties of the samples are investigated. The use of OMRA as wafers allows the reliable identification of the formation of an ordered δ-phase Hf 3 Sc 4 O 12 of a rhombohedral structure type and space group .