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Effect of Pb doping onto physical properties of ZnO thin films deposited by AACVD
In the present work, we studied the effect of Lead-concentration (0–1 wt%) on the physical properties of zinc oxide thin films and its photo-detection properties. All films were deposited using Aerosol Assisted Chemical Vapor Deposition (AACVD) techniques with the same deposition parameters but at d...
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Published in: | Journal of materials science. Materials in electronics 2023-04, Vol.34 (11), p.941, Article 941 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In the present work, we studied the effect of Lead-concentration (0–1 wt%) on the physical properties of zinc oxide thin films and its photo-detection properties. All films were deposited using Aerosol Assisted Chemical Vapor Deposition (AACVD) techniques with the same deposition parameters but at different Pb concentration changes. Films were characterized using X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), energy dispersive x-ray spectroscopy (EDX) and optical spectroscopy. XRD revealed the formation of single-phase hexagonal ZnO thin films with preferred orientation changes from (002) to (100) at Pb concentration of 0.5wt% film. The crystallite size in deposited films is between 14 and 16 nm. The formation of nano-rods was also recorded in the films prepared with 0.5 and 1wt% lead. The band gap values have been estimated and increased with increased Pb doping. The response of the deposited films against UV light (365 nm, 6 micro-watt) is recorded with very high sensitivity at long times of exposure. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-023-10360-7 |