Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates

(ZnO) X (InN) 1- X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughnes...

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Bibliographic Details
Published in:Journal of materials research 2023-04, Vol.38 (7), p.1803-1812
Main Authors: Narishige, Ryota, Yamashita, Naoto, Kamataki, Kunihiro, Okumura, Takamasa, Koga, Kazunori, Shiratani, Masaharu, Yabuta, Hisato, Itagaki, Naho
Format: Article
Language:English
Subjects:
Adatoms
Applied and Technical Physics
Biomaterials
Chemistry and Materials Science
Epitaxial growth
Film growth
High resolution electron microscopy
Indium nitride
Inorganic Chemistry
Invited Paper
Materials Engineering
Materials research
Materials Science
Nanotechnology
Single crystals
Substrates
Zinc oxide
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Summary:(ZnO) X (InN) 1- X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness ( R q ) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively. R q on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature. Graphical abstract
ISSN:0884-2914
2044-5326
DOI:10.1557/s43578-022-00827-4