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Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates
(ZnO) X (InN) 1- X films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughnes...
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| Published in: | Journal of materials research 2023-04, Vol.38 (7), p.1803-1812 |
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| Main Authors: | , , , , , , , |
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| cites | cdi_FETCH-LOGICAL-c3004-fb86c408d2ae397adb7f9530230bab1a9f573446d4309679f082c99efcf43a1a3 |
| container_end_page | 1812 |
| container_issue | 7 |
| container_start_page | 1803 |
| container_title | Journal of materials research |
| container_volume | 38 |
| creator | Narishige, Ryota Yamashita, Naoto Kamataki, Kunihiro Okumura, Takamasa Koga, Kazunori Shiratani, Masaharu Yabuta, Hisato Itagaki, Naho |
| description | (ZnO)
X
(InN)
1-
X
films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (
R
q
) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively.
R
q
on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.
Graphical abstract |
| doi_str_mv | 10.1557/s43578-022-00827-4 |
| format | article |
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X
(InN)
1-
X
films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (
R
q
) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively.
R
q
on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.
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X
(InN)
1-
X
films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (
R
q
) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively.
R
q
on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.
Graphical abstract</description><subject>Adatoms</subject><subject>Applied and Technical Physics</subject><subject>Biomaterials</subject><subject>Chemistry and Materials Science</subject><subject>Epitaxial growth</subject><subject>Film growth</subject><subject>High resolution electron microscopy</subject><subject>Indium nitride</subject><subject>Inorganic Chemistry</subject><subject>Invited Paper</subject><subject>Materials Engineering</subject><subject>Materials research</subject><subject>Materials Science</subject><subject>Nanotechnology</subject><subject>Single crystals</subject><subject>Substrates</subject><subject>Zinc oxide</subject><issn>0884-2914</issn><issn>2044-5326</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhS0EEqVwAVaWWAfGP0nsJaoKVKroBjZsLCex21RpHOxUpTvuwA05CS5B6o7VjDTve6P3ELomcEvSNL8LnKW5SIDSBEDQPOEnaESB8yRlNDtFIxCCJ1QSfo4uQlgDkBRyPkK7qbWm7AN2FodtEXqvexM3b3VpcOca7et-j12LV6Y33pmu7vVHrRu89G7Xrw5cF8y2ckXdar_Hb-3i-_Nr1j5j3TRuj23dbMKBj4fjh3CJzqxugrn6m2P0-jB9mTwl88XjbHI_T0oGwBNbiKzkICqqDZO5rorcypQBZVDogmhp05xxnlWcgcxyaWP4UkpjS8uZJpqN0c3g23n3vjWhV2u39W18qagAyoUgIKOKDqrSuxC8sarz9SbGUQTUoWA1FKxiweq3YMUjxAYoRHG7NP5o_Q_1A4ttgO8</recordid><startdate>20230414</startdate><enddate>20230414</enddate><creator>Narishige, Ryota</creator><creator>Yamashita, Naoto</creator><creator>Kamataki, Kunihiro</creator><creator>Okumura, Takamasa</creator><creator>Koga, Kazunori</creator><creator>Shiratani, Masaharu</creator><creator>Yabuta, Hisato</creator><creator>Itagaki, Naho</creator><general>Springer International Publishing</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20230414</creationdate><title>Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates</title><author>Narishige, Ryota ; Yamashita, Naoto ; Kamataki, Kunihiro ; Okumura, Takamasa ; Koga, Kazunori ; Shiratani, Masaharu ; Yabuta, Hisato ; Itagaki, Naho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c3004-fb86c408d2ae397adb7f9530230bab1a9f573446d4309679f082c99efcf43a1a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><topic>Adatoms</topic><topic>Applied and Technical Physics</topic><topic>Biomaterials</topic><topic>Chemistry and Materials Science</topic><topic>Epitaxial growth</topic><topic>Film growth</topic><topic>High resolution electron microscopy</topic><topic>Indium nitride</topic><topic>Inorganic Chemistry</topic><topic>Invited Paper</topic><topic>Materials Engineering</topic><topic>Materials research</topic><topic>Materials Science</topic><topic>Nanotechnology</topic><topic>Single crystals</topic><topic>Substrates</topic><topic>Zinc oxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Narishige, Ryota</creatorcontrib><creatorcontrib>Yamashita, Naoto</creatorcontrib><creatorcontrib>Kamataki, Kunihiro</creatorcontrib><creatorcontrib>Okumura, Takamasa</creatorcontrib><creatorcontrib>Koga, Kazunori</creatorcontrib><creatorcontrib>Shiratani, Masaharu</creatorcontrib><creatorcontrib>Yabuta, Hisato</creatorcontrib><creatorcontrib>Itagaki, Naho</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Journal of materials research</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Narishige, Ryota</au><au>Yamashita, Naoto</au><au>Kamataki, Kunihiro</au><au>Okumura, Takamasa</au><au>Koga, Kazunori</au><au>Shiratani, Masaharu</au><au>Yabuta, Hisato</au><au>Itagaki, Naho</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates</atitle><jtitle>Journal of materials research</jtitle><stitle>Journal of Materials Research</stitle><date>2023-04-14</date><risdate>2023</risdate><volume>38</volume><issue>7</issue><spage>1803</spage><epage>1812</epage><pages>1803-1812</pages><issn>0884-2914</issn><eissn>2044-5326</eissn><abstract>(ZnO)
X
(InN)
1-
X
films have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (
R
q
) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively.
R
q
on O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.
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| fulltext | fulltext |
| identifier | ISSN: 0884-2914 |
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| issn | 0884-2914 2044-5326 |
| language | eng |
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| source | Springer Nature |
| subjects | Adatoms Applied and Technical Physics Biomaterials Chemistry and Materials Science Epitaxial growth Film growth High resolution electron microscopy Indium nitride Inorganic Chemistry Invited Paper Materials Engineering Materials research Materials Science Nanotechnology Single crystals Substrates Zinc oxide |
| title | Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates |
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