Electrical and structural properties of heterojunction AZO, NZO and NiO thin films

Semiconducting metal oxide thin films of ZnO and NiO with different impurity of n-type and p-type conductivity were grown on a Si substrate by magnetic sputtering method. The structural characteristics, i.e. crystalline characteristics and crystalline order or amorphousness of layers, were investiga...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2023-05, Vol.129 (5), Article 359
Main Authors: Dejam, Laya, Ghaderi, Atefeh, Solaymani, Shahram, Sabbaghzadeh, Jamshid, Țălu, Ștefan, Salehi Shayegan, Amir Hossein
Format: Article
Language:English
Subjects:
Applied physics
Characterization and Evaluation of Materials
Condensed Matter Physics
Electronic devices
Energy gap
Heterojunctions
Machines
Manufacturing
Materials science
Metal oxides
Nanoparticles
Nanotechnology
Nickel oxides
Optical and Electronic Materials
Performance evaluation
Physics
Physics and Astronomy
Processes
Silicon substrates
Surfaces and Interfaces
Thin Films
Zinc oxide
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Summary:Semiconducting metal oxide thin films of ZnO and NiO with different impurity of n-type and p-type conductivity were grown on a Si substrate by magnetic sputtering method. The structural characteristics, i.e. crystalline characteristics and crystalline order or amorphousness of layers, were investigated by X-ray diffraction. The PL spectrum of ZnO samples doped with N and Al had a peak at a wavelength of approximately 370 nm, which is close to band gap energy of ZnO, and the highest intensity was observed in the PL spectrum of AZO sample. The effect of nanoparticle size of grown layers and their effect on performance of joints were investigated. Evaluation of the performance of metal oxide structures with current and voltage diagrams of connections and their applications in electronic devices showed that the smallest ideal diode factor is related to the Si-n/NZO-p connection with a value of 1.23, which showed the best behavior of the diode.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-023-06624-y