Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications

High‐Electron‐Mobility Transistors In article number 2200536, Ming‐Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates using thick copper‐metallized interconnects with a Pt diffusion barrier layer for Ka‐band application. The reported AlGaN/GaN HEMTs can enhance...

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Bibliographic Details
Published in:Physica status solidi. A, Applications and materials science Applications and materials science, 2023-04, Vol.220 (8), p.n/a
Main Authors: Lee, Ming-Wen, Lin, Yueh-Chin, Lai, Kuan-Hsien, Weng, You-Chen, Hsu, Heng-Tung, Chang, Edward Yi
Format: Article
Language:English
Subjects:
Aluminum gallium nitrides
Barrier layers
Copper
Diffusion barriers
Diffusion layers
Gallium nitrides
High electron mobility transistors
Interconnections
Metallizing
Semiconductor devices
Silicon substrates
Stability tests
Thermal stability
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Summary:High‐Electron‐Mobility Transistors In article number 2200536, Ming‐Wen Lee, Edward Yi Chang, and colleagues report on AlGaN/GaN HEMTs on silicon substrates using thick copper‐metallized interconnects with a Pt diffusion barrier layer for Ka‐band application. The reported AlGaN/GaN HEMTs can enhance the device performance with good reliability. High voltage stress and high thermal stability tests of the designed devices are performed to study and demonstrate the potential for future 5G applications.
ISSN:1862-6300
1862-6319
DOI:10.1002/pssa.202370016