Theoretical study of electron transfer processes in N749/ZnS semiconductor devices

In this work, we study theoretically the electron transfer processes at N749 sensitized dye contact to ZnS semiconductor interface. The orientation energy of refractive index and dielectric constant.It analysis the influence of orientation energy on the electron transfer rate behaviour in N749/ ZnS...

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Bibliographic Details
Main Authors: Harmoosh, Mohammed Kamil, Hassooni, Mohsin A.
Format: Conference Proceeding
Language:English
Subjects:
Chemical potential
Coupling
Coupling (molecular)
Dyes
Electrochemical potential
Electron transfer
Electronic devices
Refractivity
Semiconductor devices
Zinc sulfide
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Summary:In this work, we study theoretically the electron transfer processes at N749 sensitized dye contact to ZnS semiconductor interface. The orientation energy of refractive index and dielectric constant.It analysis the influence of orientation energy on the electron transfer rate behaviour in N749/ ZnS devices depending on data results of electron transfer rate constant. The potential barrier increased with decreasing the chemical potential of N749 molecule dye, and it predicted the driving energy and potential barrier. The decrease of electrochemical potential for the N749 molecule reduces to increase the rate and increases the potential. In particular, the strong coupling is the effect on charge rate, the charge rate increased with the strong coupling increases and vice versa. Results indicate that N749 is suitable with ZnS as a result of energy alignment for two material devices.
ISSN:0094-243X
1551-7616
DOI:10.1063/5.0129533