Loading…
Domain matching epitaxy of α-Ga2O3 thin film on sapphire by pulsed laser deposition
Metastable (00 l )-oriented rhombohedral α-Ga 2 O 3 thin films with phase purity were epitaxially grown on c -plane α-Al 2 O 3 substrates using pulsed laser deposition. It was elucidated that domain matching epitaxy enables the epitaxial growth of α-Ga 2 O 3 thin film on α-Al 2 O 3 substrate by stab...
Saved in:
Published in: | Journal of the Korean Physical Society 2023-04, Vol.82 (8), p.781-785 |
---|---|
Main Authors: | , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | Metastable (00
l
)-oriented rhombohedral α-Ga
2
O
3
thin films with phase purity were epitaxially grown on
c
-plane α-Al
2
O
3
substrates using pulsed laser deposition. It was elucidated that domain matching epitaxy enables the epitaxial growth of α-Ga
2
O
3
thin film on α-Al
2
O
3
substrate by stabilizing structural instability through reducing misfit strain. In reciprocal space mapping analyses of α-Ga
2
O
3
thin films with different thicknesses, no considerable differences in lattice parameters (
a
= 4.977 Å and
c
= 13.442 Å) and the degree of misfit strain were identified. The optical bandgap of α-Ga
2
O
3
thin film was modulated with crystal quality from 4.75 to 5.3 eV in the thickness range from 4 to 49 nm, indicating the characteristics of α-phase. Our results provide a facile way to stabilize the metastable α-phase of Ga
2
O
3
using the α-Ga
2
O
3
/α-Al
2
O
3
heterostructures through domain matching epitaxy with comprehensive structural characteristics and a promising potential for bandgap tuning for power devices, sensors, and solar-blind deep-ultra-violet photodetectors. |
---|---|
ISSN: | 0374-4884 1976-8524 |
DOI: | 10.1007/s40042-023-00766-1 |