Observation of the Fano Resonance in a Semiconductor Structure with a p–n Junction Formed in a Porous Silicon Film

The observation of a Fano resonance by Raman spectroscopy in a semiconductor structure with a p – n junction formed by thermal diffusion of boron in a porous silicon film is reported. The porous film is grown by metal-assisted etching on a single-crystal n -type silicon substrate.

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Bibliographic Details
Published in:Bulletin of the Lebedev Physics Institute 2023-02, Vol.50 (2), p.52-54
Main Authors: Melnik, N. N., Tregulov, V. V., Skoptsova, G. N., Ivanov, A. I., Kostsov, D. S.
Format: Article
Language:English
Subjects:
Fano resonance
P-n junctions
Physics
Physics and Astronomy
Porous silicon
Raman spectroscopy
Silicon films
Silicon substrates
Single crystals
Thermal diffusion
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Description
Summary:The observation of a Fano resonance by Raman spectroscopy in a semiconductor structure with a p – n junction formed by thermal diffusion of boron in a porous silicon film is reported. The porous film is grown by metal-assisted etching on a single-crystal n -type silicon substrate.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335623020057